Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology

Minoru Sugawara; Hiroichi Kawahira; Keisuke Tsudaka; Akihiro Ogura; Satoru Nozawa; Fumikatsu Uesawa; Hideo Shimizu

doi:10.1117/12.175416

17 May 1994 Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology

Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Akihiro Ogura, Satoru Nozawa, Fumikatsu Uesawa, Hideo Shimizu

Author Affiliations +

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175416
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The performance and practical fabrication latitude of attenuated phase shifting masks have been studied using a newly developed exposure-defocus and mask fabrication latitude (EDM) methodology in which the mask linewidth latitude is taken into account as well as the conventional estimation parameters such as the exposure latitude and depth of focus (DOF). Both isolated and dense 0.3 micrometers contact hole (C/H) patterns have been evaluated using an EDM process window which is obtained by the light intensity profiles with the KrF 248 nm exposure, NA equals 0.45 and (sigma) equals 0.3. When the practical process latitude of within +/- 5% of exposure dose and +/- 0.01 micrometers of mask linewidth are supposed, background transmittances of more than 9.00% and phase error controllability within +/- 2 degrees are required for both isolated and dense C/H patterns. The EDM window is steeply shrunk by the enhanced optical proximity effect for the dense C/H pattern at a pitch of less than 0.90 micrometers .

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Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Akihiro Ogura, Satoru Nozawa, Fumikatsu Uesawa, and Hideo Shimizu "Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175416

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