Multiple-exposure interferometric lithography

Saleem H. Zaidi; Steven R. J. Brueck

doi:10.1117/12.175478

17 May 1994 Multiple-exposure interferometric lithography

Saleem H. Zaidi, Steven R. J. Brueck

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175478
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Interferometric lithography provides a simple, inexpensive technique for the fabrication of large areas of extreme sub-micrometers structures. Using a 364 nm Ar-ion laser source, gratings with periods to 0.2 micrometers and CDs as small as 30 nm are reported. Multiple exposure interferometric lithography provides the all important extension to 2-D structures. Importantly, pairwise exposures maintain the effectively infinite depth-of-field while still allowing complex structures. Mix and match with conventional optical lithography provides additional flexibility. An interdigitated structure suitable for high-speed photodetectors and conductive particle sensors is an example.

Citation Download Citation

Saleem H. Zaidi and Steven R. J. Brueck "Multiple-exposure interferometric lithography", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175478

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