All-dry resist processes for 193-nm lithography

Mark W. Horn; Brian E. Maxwell; Roderick R. Kunz; Michael S. Hibbs; Lynn M. Eriksen; Susan C. Palmateer; Anthony R. Forte

doi:10.1117/12.210368

9 June 1995 All-dry resist processes for 193-nm lithography

Mark W. Horn, Brian E. Maxwell, Roderick R. Kunz, Michael S. Hibbs, Lynn M. Eriksen, Susan C. Palmateer, Anthony R. Forte

Author Affiliations +

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210368
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

We report on two different all-dry resist schemes for 193-nm lithography, one negative tone and one positive tone. Our negative tone resist is an extension of our initial work on all-dry photoresists. This scheme employs a bilayer in which the imaging layer is formed by plasma enhanced chemical vapor deposition (PECVD) from tetramethylsilane (TMS) and deposited onto PECVD carbon-based planarizing layers. Figure 1 shows SEMs of dark field and light field octagons patterned in projection on Lincoln Laboratory's 0.5-NA 193-nm Micrascan system. These 0.225-micrometers and 0.200-micrometers line and space features were obtained at a dose of approximately 58 mJ/cm². Dry development of the exposed resist was accomplished using Cl₂ chemistry in a helicon high-ion-density etching tool. Pattern transfer was performed in the helicon tool with oxygen-based chemistries. Recently, we have also developed an all-dry positive-tone silylation photoresist. This photoresist is a PECVD carbon-based polymer which is crosslinked by 193-nm exposure, enabling selective silylation similar to that initially reported by Hartney et al., with spin-applied polymers. In those polymers, for example polyvinylphenol, the silylation site concentration is fixed by the hydroxyl groups on the polymer precursors, thus limiting the silicon uptake per unit volume. With PECVD polymers, the total concentration of silylation sites and their depth can be tailored by varying plasma species as a function of time during the deposition. This affords the possibility of greater silicon uptake per unit volume and better depth control of the silylation profile. Figure 2 shows a SEM of 0.5-micrometers features patterned in plasma deposited silylation resist.

Citation Download Citation

Mark W. Horn, Brian E. Maxwell, Roderick R. Kunz, Michael S. Hibbs, Lynn M. Eriksen, Susan C. Palmateer, and Anthony R. Forte "All-dry resist processes for 193-nm lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210368

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