Paper
23 August 1995 Formation of V1-xWxO2 thermochromic films by reactive magnetron sputtering with an alloy target
Ping Jin, Kazuki Yoshimura, S. Iwama, Sakae Tanemura
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Abstract
The transition temperature (tau) c of the V1-xWxO2 films deposited by dual-target sputtering was precisely determined from the changes both in IR transmittance and in electrical resistivity against temperature. The relationship between x (0-0.026) in V1-xWxO2 and (tau) c(0-67 degree(s)C) in the most applicable range for window coatings was clarified and a confirmed. The V1-xWxO2 films containing the desired tungsten doping amount were fabricated with reproducibility by sputtering of a V-W(1.6at.%) alloy target under optimal conditions. The (tau) c reduction efficiency for the films deposited using alloy target is almost identical of that for the films deposited by dual-target sputtering. The V1-xWxO2 films deposited using alloy target showed thermochroism comparative to those previously prepared by dual-target sputtering.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ping Jin, Kazuki Yoshimura, S. Iwama, and Sakae Tanemura "Formation of V1-xWxO2 thermochromic films by reactive magnetron sputtering with an alloy target", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); https://doi.org/10.1117/12.217358
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KEYWORDS
Sputter deposition

Transmittance

Doping

Temperature metrology

Tungsten

Crystals

Optical testing

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