Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography

Hung-Eil Kim; Chang-Nam Ahn; KeunYoung Kim; Ki-Ho Baik

doi:10.1117/12.228197

8 December 1995 Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography

Hung-Eil Kim, Chang-Nam Ahn, KeunYoung Kim, Ki-Ho Baik

Proceedings Volume 2621, 15th Annual BACUS Symposium on Photomask Technology and Management; (1995) https://doi.org/10.1117/12.228197
Event: 15th Annual BACUS Symposium on Photomask Technology and Management '95, 1995, Santa Clara, CA, United States

Abstract

Alternating phase shift mask (PSM) is very effective to memory devices which have highly repeated patterns. In order to apply the alternating PSM to a real device, we have investigated the design problems such as proximity effect, phase contradiction, phase transition, and linewidth variation. We also designed various hard defects to check defect printability on a wafer. Using i-line lithography (0.50 NA, 0.46 sigma) with alternating PSM, we obtained a useful DOF of 1.2 micrometer for a bit line of 256 M DRAM. The experimental and simulation results for phase-induced problems and defect printability on wafer are described in detail.

Citation Download Citation

Hung-Eil Kim, Chang-Nam Ahn, KeunYoung Kim, and Ki-Ho Baik "Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); https://doi.org/10.1117/12.228197

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