Recording and storage of information in boron-doped silicon using YAG:Nd laser

Juris Blums; Arthur Medvids

doi:10.1117/12.226226

3 November 1995 Recording and storage of information in boron-doped silicon using YAG:Nd laser

Juris Blums, Arthur Medvids

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226226
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

The method of the recording and storage of the information in boron-doped silicon using YAG:Nd laser is proposed. The laser-induced centers, which are generated during the laser annealing of silicon can be used for the recording of information. The dependence of a concentration and a time-stability of generated centers on parameters of the laser radiation and impurities content in the silicon are investigated experimentally. The model of the generation of additional centers in the laser-annealed area is proposed.

Citation Download Citation

Juris Blums and Arthur Medvids "Recording and storage of information in boron-doped silicon using YAG:Nd laser", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226226

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