Applications Of InP Photoconductive Switches

F. J. Leonberger

doi:10.1117/12.965693

28 July 1981 Applications Of InP Photoconductive Switches

F. J. Leonberger

Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965693
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

The operational principles and performance of InP photoconductive switches are reviewed. The results suggest that these devices may be better suited for high-speed photodetection and signal processing applications than comparable Si or GaAs devices. The switches have a response time of -50 psec, an off-state impedance of 10 fF and 100 MΩ and an on-state impedance of 45 Ω for 40 pJ of incident energy. In a variety of experiments with cw mode-locked lasers, the switches have been used as fast optical pulse detectors, high-speed pulse-train generators and as wide-band analog samplers. In the latter application, a 70-MHz sine wave has been sampled at 275 MS/sec with 98% accuracy. Extension of this sampling application to analog-to-digital-conversion demultiplexing operation is proposed.

Citation Download Citation

F. J. Leonberger "Applications Of InP Photoconductive Switches", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965693

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