Paper
30 September 1996 Fabrication and demonstration of FET-SEED smart pixels
Zhongli Liu, Mingcui Cao, Anjun Wan, Hongpu Li, Fengguang Luo, Rong Han Wu, Hongda Chen, Zhibiao Chen, Wen Gao
Author Affiliations +
Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253194
Event: Photonics China '96, 1996, Beijing, China
Abstract
Self-electrooptic effect devices (SEEDs) and GaAs field- effect transistors (FETs) are used to form smart pixels. A 8 X 4 array of simple field-effect transistor-self- electrooptic effect device (FET-SEED) smart pixels has been fabricated by interconnecting a SEED chip and a GaAs FET chip on a printed circuit board. The smart pixel consists of a detector SEED, a modulator SEED, and a simple GaAs FET amplifier. An optical system have been designed and constructed to demonstrate the smart pixels. The operational principle of the smart pixels is also described.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhongli Liu, Mingcui Cao, Anjun Wan, Hongpu Li, Fengguang Luo, Rong Han Wu, Hongda Chen, Zhibiao Chen, and Wen Gao "Fabrication and demonstration of FET-SEED smart pixels", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253194
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KEYWORDS
Field effect transistors

Gallium arsenide

Sensors

Modulators

Absorption

Optical amplifiers

Optical interconnects

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