Color-sensitive photodetectors in standard CMOS and BiCMOS technologies

Mohamed Ben Chouikha; Guo Neng Lu; Mohamed Sedjil; Gerard Sou

doi:10.1117/12.262515

19 December 1996 Color-sensitive photodetectors in standard CMOS and BiCMOS technologies

Mohamed Ben Chouikha, Guo Neng Lu, Mohamed Sedjil, Gerard Sou

Proceedings Volume 2950, Advanced Focal Plane Arrays and Electronic Cameras; (1996) https://doi.org/10.1117/12.262515
Event: Advanced Imaging and Network Technologies, 1996, Berlin, Germany

Abstract

The authors present a novel technique for color detection by using a buried double pn junction (B.D.J.) and a buried triple pn junction (B.T.J.) structure. For the B.D.J. wavelength-dependent photocurrents I₁ and I₂ can be measured. The wavelength of monochromatic incident light can be identified from the ratio I₂/I₁. In the case of the B.T.J. with wavelength dependent photocurrents the three colorimetric components of the incident light can be extracted. These structures can be implemented in standard CMOS and BiCMOS technology respectively.

Citation Download Citation

Mohamed Ben Chouikha, Guo Neng Lu, Mohamed Sedjil, and Gerard Sou "Color-sensitive photodetectors in standard CMOS and BiCMOS technologies", Proc. SPIE 2950, Advanced Focal Plane Arrays and Electronic Cameras, (19 December 1996); https://doi.org/10.1117/12.262515

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