Paper
4 April 1997 High-resolution microlithography using a 193-nm excimer laser source
Author Affiliations +
Proceedings Volume 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference; (1997) https://doi.org/10.1117/12.270110
Event: XI International Symposium on Gas Flow and Chemical Lasers and High Power Laser Conference, 1996, Edinburgh, United Kingdom
Abstract
A 193 nm excimer laser microstepper has been developed for deep UV photolithography research and development and system details are presented. The tool incorporates a times 10, 0.5 NA, 4 mm field diameter, high-resolution imaging lens of either all-refractive or catadioptric design. An all-fused silica refractive lens has been used in the results reported here to carry out exposures in polymethylmethacrylate (PMMA) and polyvinylphonel (MX-P8) photoresists. Well-resolved images of 0.2 micrometer dense lines and spaces have been produced in the PMMA and MX-P8 resists.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadeem Hasan Rizvi, Dominic Ashworth, and Malcolm C. Gower "High-resolution microlithography using a 193-nm excimer laser source", Proc. SPIE 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (4 April 1997); https://doi.org/10.1117/12.270110
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KEYWORDS
Excimer lasers

Semiconducting wafers

Polymethylmethacrylate

Optical lithography

Photoresist materials

Laser development

Silica

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