Paper
4 April 1997 Transient four-wave mixing of pulsed CO2 laser radiation in semiconductors
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Proceedings Volume 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference; (1997) https://doi.org/10.1117/12.270252
Event: XI International Symposium on Gas Flow and Chemical Lasers and High Power Laser Conference, 1996, Edinburgh, United Kingdom
Abstract
A temporal behavior of a phase conjugation reflectivity R at degenerate four-wave mixing (DFWM) in InSb for a pulsed carbon-dioxide laser radiation is theoretically investigated. It is shown, that R at a transient DFWM is determined by a response time of a nonlinear medium, which depends on intensity of a radiation, and can be some times higher than a reflectivity for non-transient condition.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michail G. Galushkin, K. V. Mitin, Andrei A. Ionin, and Andrei A. Kotkov "Transient four-wave mixing of pulsed CO2 laser radiation in semiconductors", Proc. SPIE 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (4 April 1997); https://doi.org/10.1117/12.270252
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KEYWORDS
Semiconductors

Reflectivity

Gas lasers

Semiconductor lasers

Absorption

Four wave mixing

Refractive index

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