Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors

Richard L. Gentilman; Edward A. Maguire

doi:10.1117/12.932999

3 May 1982 Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors

Richard L. Gentilman, Edward A. Maguire

Proceedings Volume 0315, Reflecting Optics for Synchrotron Radiation; (1982) https://doi.org/10.1117/12.932999
Event: 1981 Brookhaven Conferences, 1981, Upton, United States

Abstract

CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/a ratio and its ability to be super-polished to <10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.

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Richard L. Gentilman and Edward A. Maguire "Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors", Proc. SPIE 0315, Reflecting Optics for Synchrotron Radiation, (3 May 1982); https://doi.org/10.1117/12.932999

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