Relationship between ruling quality and lithographic gap in proximity photolithography

Yongqi Fu

doi:10.1117/12.280530

14 August 1997 Relationship between ruling quality and lithographic gap in proximity photolithography

Yongqi Fu

Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280530
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

The method of proximity photolithography is a practical and available way in the manufacture of gratin and radial encode. One of the most important factors of this way is lithographic gap. That is the distance from mask to surface of photoresist coated on ruled blank. The size of it affects the ruling quality directly, such as causing edge scattering. Because of the existing near-field Fresnel diffraction, it is impossible to obtain the ruling which is the same as the mask even if on the first focal plane of Fresnel. As it is very difficult to produce the exact parallel light in usual optical system, the actual image we get is not an ideal self-image. Therefore, a better position of the mask should be found in order to ensure the ruling quality. The relationship between image contrast and lithographic gap is deduced in the view of image contrast in this paper. According to the relation, rang of practical lithographic gap is obtained. Thus, a reliable basis is provided for selecting the best gap in actual photolithography.

Citation Download Citation

Yongqi Fu "Relationship between ruling quality and lithographic gap in proximity photolithography", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280530

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KEYWORDS

Lithography

Optical lithography

Photomasks

Light scattering

Manufacturing

Near field

Near field diffraction

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