High-power Al-free active-region diode lasers

Luke J. Mawst; Jerome Kent Wade; A. Al-Muhanna

doi:10.1117/12.304431

7 April 1998 High-power Al-free active-region diode lasers

Luke J. Mawst, Jerome Kent Wade, A. Al-Muhanna

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304431
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Al-free InGaAsP/InGaP/GaAs-based diode lasers in the wavelength range 730 - 980 nm have been grown by metalorganic chemical vapor deposition (MOCVD). A large transverse spot size is obtained using a Broad Waveguide (BW) design, permitting record output powers to be obtained.

Citation Download Citation

Luke J. Mawst, Jerome Kent Wade, and A. Al-Muhanna "High-power Al-free active-region diode lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304431

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available