Anisotropic chemical etching of silicon

Shamin Ahmad; Virendra Kr Dwivedi

doi:10.1117/12.305554

16 April 1998 Anisotropic chemical etching of silicon

Shamin Ahmad, Virendra Kr Dwivedi

Proceedings Volume 3321, 1996 Symposium on Smart Materials, Structures, and MEMS; (1998) https://doi.org/10.1117/12.305554
Event: Smart Materials, Structures and MEMS, 1996, Bangalore, India

Abstract

Potassium hydroxide, water and isopropanol based etchants have been used to etch silicon anisotropically for fabricating microelectromechanical components and structures for various applications. For etching V and U grooves, <100> and <110> orientation silicon wafer are used. Proper orientation of the pattern to be etched is needed to be aligned with reference to the standard flat provided in the commercial wafer. A method has been developed, where proper orientation is experimentally determined on the given wafer for pattern delineation. Very smooth walls and bottom of the trenches have been obtained after controlling the etchant composition, temperature and orientation of the masking pattern. Process details are presented with experimental results.

Citation Download Citation

Shamin Ahmad and Virendra Kr Dwivedi "Anisotropic chemical etching of silicon", Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); https://doi.org/10.1117/12.305554

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available