CMOS MEMS technology and CAD: the case of thermal microtransducers

Henry Baltes; Oliver Brand; Oliver Paul

doi:10.1117/12.320157

20 July 1998 CMOS MEMS technology and CAD: the case of thermal microtransducers

Henry Baltes, Oliver Brand, Oliver Paul

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Proceedings Volume 3328, Smart Structures and Materials 1998: Smart Electronics and MEMS; (1998) https://doi.org/10.1117/12.320157
Event: 5th Annual International Symposium on Smart Structures and Materials, 1998, San Diego, CA, United States

Abstract

Thermally-based transducer microsystems can be made by using CMOS IC technology, post-CMOS micromachining or deposition, and flip-chip packaging. Technology steps, materials, and physical effects pertinent to thermal microtransducers are summarized together with microheater, thermistor, thermopile, thermal isolation, and heat sink structures. An infrared intrusion detector, a thermal air flow sensor, and thermally excited microresonators for acoustic and chemical sensing serve as demonstrators. We discuss the characterization of process-dependent properties of CMOS materials crucial for thermal microtransducer CAD.

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Henry Baltes, Oliver Brand, and Oliver Paul "CMOS MEMS technology and CAD: the case of thermal microtransducers", Proc. SPIE 3328, Smart Structures and Materials 1998: Smart Electronics and MEMS, (20 July 1998); https://doi.org/10.1117/12.320157

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KEYWORDS

Silicon

Sensors

Dielectrics

Metals

Infrared sensors

Etching

Gold

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