Investigation using MAI ellipsometry of damage by surface metallic doping of near-surface layers in semiconductors

Nikolas L. Dmitruk; Lubov A. Zabashta; Oleg I. Zabashta

doi:10.1117/12.306189

20 April 1998 Investigation using MAI ellipsometry of damage by surface metallic doping of near-surface layers in semiconductors

Nikolas L. Dmitruk, Lubov A. Zabashta, Oleg I. Zabashta

Author Affiliations +

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306189
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

Flllpsometr is the most preferable method for investigation and characterisation iii faint niicrorelief surtace ss hen other optical methods are not enough sensitive: for example. there is the gentlr sloping surfaces far which so-called Raleigh condjtion is satisfied: 2k5coso 2. k=rt. 2. Here w is the wave length. d is the root-mean-square roughness. Phsicall it means that intuence of the individual roughness is small bitt the total contribution in the optical properties is large. Such type of semiconductor surfaces can he prepared b means of surfaces metallic doping with fallowing removal of metal coating. The electrochernical technology of surface doping (metallization is accompanied surel br dissolution of the semiconductor substrate around the metal islands. Keywords: ellipsometr. multilaer flim. interfactal layer. superlattice. optical properties. theory of the effectise medium

Citation Download Citation

Nikolas L. Dmitruk, Lubov A. Zabashta, and Oleg I. Zabashta "Investigation using MAI ellipsometry of damage by surface metallic doping of near-surface layers in semiconductors", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306189

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