Micro-Raman characterization of GaN epilayers

Marion Renucci; F. Demangeot; J. Frandon

doi:10.1117/12.306235

20 April 1998 Micro-Raman characterization of GaN epilayers

Marion Renucci, F. Demangeot, J. Frandon

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306235
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

Raman spectroscopy is used to study the influence of the deposition temperature of GaN buffer layers on the lattice dynamics of epitaxial GaN layers. This growth parameter is shown to play a role in the non intentional n-doping of the layers, as evidenced by plasmon coupling with longitudinal phonons. Lineshape analysis of the L^-(0) low- frequency component of the coupled A₁ (LO)-plasmon mode, based on a dielectric approach and supported by IR reflectivity measurements, is applied to spatially-resolved micro-Raman measurements, revealing local inhomogeneities in the free-carrier concentration on the scale of microcrystallites. On account of polarization measurements achieved on the sample edge, additional scattering in the spectral range of optical phonons is attributed to charge density fluctuations. Partial screening of q does not equal 0 LO phonons by the free-carriers is invoked to explain polarized scattering located in the range of high density of phonon states.

Citation Download Citation

Marion Renucci, F. Demangeot, and J. Frandon "Micro-Raman characterization of GaN epilayers", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306235

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KEYWORDS

Gallium nitride

Phonons

Scattering

Plasmons

Raman scattering

Raman spectroscopy

Light scattering

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