Paper
22 July 1998 LETI/LIR's amorphous silicon uncooled microbolometer development
Jean-Luc Tissot, Frederic Rothan, Corrinne Vedel, Michel Vilain, Jean-Jacques Yon
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Abstract
Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost 2D IR arrays. LETI/LIR, which has been involved in this field for a few years, has chosen resistive amorphous silicon as thermometer for its uncooled microbolometer development. After a first phase dedicated to acquisition of the most important detector parameters in order to help the modeling and technological development, an IRCMOS laboratory model (256 X 64 with a pitch of 50 micrometer) was realized and characterized. It was shown that NETD of 90 mK at f/1, 25 Hz and 300 K background can be obtained with high thermal insulation (1.2 107 K/W).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Luc Tissot, Frederic Rothan, Corrinne Vedel, Michel Vilain, and Jean-Jacques Yon "LETI/LIR's amorphous silicon uncooled microbolometer development", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); https://doi.org/10.1117/12.317580
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Cited by 45 scholarly publications and 14 patents.
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KEYWORDS
Amorphous silicon

Microbolometers

Bolometers

Resistance

Infrared detectors

Absorption

Detector development

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