Paper
26 May 1998 Plasma study in laser ablation process for deposition
C. Vivien, Joerg Hermann, Chantal Boulmer-Leborgne
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308640
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
In order to get a better inside in the reactive Pulsed Laser Deposition of nitride thin films, we performed time- and space-resolved plasma diagnostics during ablation of Ti, Al and C targets in low pressure nitrogen containing atmospheres using pulsed nanosecond UV lasers. In the case of carbon, thin films of CxNy were deposited on silicon substrates and characterized by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis. With respect to irradiation of metal targets, during which a dense and highly ionized plasma was induced for laser intensities >= 100 MWcm-2, much higher values >= 1 GWcm-2 were necessary to induce significant plasma ionization on carbon. To increase the plasma reactivity in the case of carbon ablation, a radiofrequency discharge was added to excite and preionize the ambient gas. From correlation between the plasma characteristics and thin film analyses, conclusions could be made about the CxNy deposition process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Vivien, Joerg Hermann, and Chantal Boulmer-Leborgne "Plasma study in laser ablation process for deposition", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308640
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KEYWORDS
Plasma

Carbon

Molecules

Laser ablation

Nitrogen

Ionization

Atmospheric plasma

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