Effect of optical confinement factor and gain constant on the distortion levels in InGaAsP semiconductor laser diodes

Fatih V. Celebi; Remzi Yildirim; Kenan Danisman; Ahmet Ozek

doi:10.1117/12.328651

4 December 1998 The effect of optical confinement factor and gain constant on the distortion levels in InGaAsP semiconductor laser diodes

Fatih V. Celebi, Remzi Yildirim, Kenan Danisman, Ahmet Ozek

Author Affiliations +

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328651
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

The effect of optical confinement factor and gain constant (optical gain coefficient) on harmonic distortion in 1.55 micrometers semiconductor laser diodes are investigated by using a mathematical model based on multi-mode rate equations. The model can be extended and used to simulate the output of any direct modulated Fabry-Perot semiconductor laser in long wavelength by changing some of the parameters. Gain and spontaneous emission are included as spectrums, since each mode experiences different gain and spontaneous emission coupled to each mode is different. The important parameters such as Auger recombination, nonradiative recombination, spontaneous emission life time and gain saturation are included in the model. The second harmonic distortion levels are examined and computed graphically for different threshold levels.

Citation Download Citation

Fatih V. Celebi, Remzi Yildirim, Kenan Danisman, and Ahmet Ozek "The effect of optical confinement factor and gain constant on the distortion levels in InGaAsP semiconductor laser diodes", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328651

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