Modeling of the electrical derivative characteristic of InGaAsP multiple-quantum-well lasers

Alain Champagne; Romain Maciejko; Toshihiko Makino

doi:10.1117/12.328731

4 December 1998 Modeling of the electrical derivative characteristic of InGaAsP multiple quantum well lasers

Alain Champagne, Romain Maciejko, Toshihiko Makino

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328731
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

A comprehensive semiconductor laser model is used to analyze the first electrical derivative characteristic of long wavelength MQW semiconductor lasers. It is found that the charge neutrality condition and the continuity of the quasi- Fermi levels, usually assumed in the rate equation approach, need not be respected. The first electrical derivative characteristics of abrupt and GRINSCH MQW structures are presented. The effects of doping in the active region on the optical gain and on the first electrical derivative characteristic are also studied.

Citation Download Citation

Alain Champagne, Romain Maciejko, and Toshihiko Makino "Modeling of the electrical derivative characteristic of InGaAsP multiple quantum well lasers", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328731

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