Paper
4 September 1998 Copper post-CMP cleaning process on a dry-in/dry-out tool
Sanjay Basak, Malcolm Grief, Anand Gupta, Krishna Murella, Barrie VanDevender
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Abstract
Metal Chemical Mechanical Planarization (CMP) and post CMP cleaning have continued to increase in importance in semiconductor manufacturing. The introduction of copper metallization into semiconductor manufacturing processes has created a need for integrating CMP and cleaning tools, as well as a demand for the development of novel cleaning solutions. One system designed for integrated CMP processing and cleaning, commonly referred to as dry-in/dry-out CMP, is the SpeedFam Auriga C. The Auriga C integrates a widely used polishing tool together with a proven cleaning technique. The key to the operation of the Auriga C cleaning process is the effective operation of the PVA brush cleaners, water track transport, final jet rinse and high-speed spinner dryer. The effective operation of the cleaning mechanism for copper post- CMP cleaning requires the use of new chemical solutions. Typical solutions used for post process cleaning of more mature CMP processes are either ineffective for cleaning or chemically incompatible with the copper process. This paper discusses the cleaning mechanism used in an integrated dry- in/dry-out tool and demonstrates an effective and novel cleaning solution for use with this type of post-CMP cleaning process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sanjay Basak, Malcolm Grief, Anand Gupta, Krishna Murella, and Barrie VanDevender "Copper post-CMP cleaning process on a dry-in/dry-out tool", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); https://doi.org/10.1117/12.324033
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KEYWORDS
Copper

Semiconducting wafers

Chemical mechanical planarization

Polishing

Particles

Chemistry

Oxides

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