Microchannel avalanche semiconductor photodetectors: status and perspectives

Zynaddyn Ya. Sadygov; I. M. Zheleznykh; A. E. Luk'yanov; N. Bacchetta; D. Bisello; Alim K. Kaminsky

doi:10.1117/12.350486

22 June 1999 Microchannel avalanche semiconductor photodetectors: status and perspectives

Zynaddyn Ya. Sadygov, I. M. Zheleznykh, A. E. Luk'yanov, N. Bacchetta, D. Bisello, Alim K. Kaminsky

Proceedings Volume 3516, 23rd International Congress on High-Speed Photography and Photonics; (1999) https://doi.org/10.1117/12.350486
Event: Twenty-Third International Congress on High-Speed Photography and Photonics, 1998, Moscow, Russian Federation

Abstract

A new metal-resistive layer-semiconductor avalanche photodiode for single photon detection was designed and produced. High efficiency of single photon registration at room temperature was achieved. These devices also show the possibility of recording short light pulses with front duration as low as 5 ps.

Citation Download Citation

Zynaddyn Ya. Sadygov, I. M. Zheleznykh, A. E. Luk'yanov, N. Bacchetta, D. Bisello, and Alim K. Kaminsky "Microchannel avalanche semiconductor photodetectors: status and perspectives", Proc. SPIE 3516, 23rd International Congress on High-Speed Photography and Photonics, (22 June 1999); https://doi.org/10.1117/12.350486

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