Paper
19 August 1998 High quantum efficiency InAs/GaInSb/AlSb interband cascade lasers
Bao Hua Yang, Rui Q. Yang, Dongxu Zhang, C.H. Thompson Lin, Shin Shem Pei
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319647
Event: Photonics China '98, 1998, Beijing, China
Abstract
We proposed and demonstrated a new type of quantum cascade laser based on interband transitions in InAs/GaInSb/AlSb type-II quantum wells. Contrary to the conventional heterostructure or quantum well lasers, this device takes advantage of recycling carriers from valence band back to conduction band for sequential photon emissions to achieve high quantum efficiency. So far, an external differential quantum efficiency exceeding 200% has been observed from 4- micrometers lasers under 1 microsecond(s) pulses and 0.1% duty cycle at 80 K. Under 5 - 10 microsecond(s) pulse lengths and 10% duty cycle, peak powers > 160 mW have been obtained, the corresponding internal quantum efficiency was deduced to be 220%.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bao Hua Yang, Rui Q. Yang, Dongxu Zhang, C.H. Thompson Lin, and Shin Shem Pei "High quantum efficiency InAs/GaInSb/AlSb interband cascade lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319647
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum cascade lasers

External quantum efficiency

Quantum efficiency

Quantum wells

Internal quantum efficiency

Laser damage threshold

Pulsed laser operation

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