Paper
7 April 1999 Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation
Stavros G. Demos, Michael C. Staggs, Ming Yan, Harry B. Radousky, James J. De Yoreo
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Abstract
Defect clusters in the bulk of large KDP crystals are revealed using a microscopic fluorescence imaging system and CW laser illumination. Exposure of the crystal to high power 355-nm, 3-ns laser irradiation leads to a significant reduction of the number of observed optically active centers. The initially observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The number of defect clusters can be reduced by a factor of 102 or more under exposure to 355-nm laser irradiation while their average intensities also decreases. Spectroscopic measurements provide information on the electronic structure of the defects.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stavros G. Demos, Michael C. Staggs, Ming Yan, Harry B. Radousky, and James J. De Yoreo "Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation", Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); https://doi.org/10.1117/12.344402
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

Luminescence

Laser crystals

Active optics

Imaging systems

Laser induced damage

Laser irradiation

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