Paper
1 April 1999 Temperature characteristics of light emission spectra and threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers
Mitsuru Sugawara, Kohki Mukai, Yoshiaki Nakata
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Abstract
We examined the temperature characteristics of light emission spectra and threshold currents for columnar-shaped self- assembled InGaAs quantum dot lasers which show lasing from the ground-state quantized level. While lasing occurred with one line including a series of longitudinal modes at room temperature, spectra at 80 K showed broad lasing emission over a range of 50 - 60 meV. We explain this result by a model that dots with different energies start lasing independently at low temperatures due to their spatial localization, while at room temperature the dots contribute to one-line lasing collectively via homogeneous broadening of optical gain. We attribute the origin of homogeneous broadening to scattering processes to exchange carriers between the ground state and excited states. The characteristic temperature of threshold currents was T0 equals 60 - 90 K between 287 K and 353 K. By evaluating the current dependence of the spontaneous emission spectra up to lasing thresholds at various temperatures, we found that this low T0 is due to the increase in the nonradiative current component, presumably caused by nonradiative carrier recombination through defects in the wetting layer. These results show the importance of controlling carrier distribution in the excited states including the wetting layer to achieve high-performance quantum-dot lasers.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata "Temperature characteristics of light emission spectra and threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344521
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KEYWORDS
Laser damage threshold

Semiconductor lasers

Chlorine

Quantum dots

Scattering

Gallium arsenide

Indium arsenide

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