Three years of InGaN quantum-well lasers: commercialization already

Shuji Nakamura

doi:10.1117/12.344525

1 April 1999 Three years of InGaN quantum-well lasers: commercialization already

Shuji Nakamura

Proceedings Volume 3628, In-Plane Semiconductor Lasers III; (1999) https://doi.org/10.1117/12.344525
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Long lifetime violet InGaN-multi-quantum-well (MQW)/GaN/AlGaN separate-confinement heterostructure laser diodes (LDs) were successfully fabricated using an epitaxially laterally overgrown GaN (ELOG) by reducing a large number of threading dislocations originated from an interface between GaN and sapphire substrate. The threading dislocations shorten the lifetime of the LDs through an increase of the threshold current density. The LDs with cleaved mirror facets showed an output power as high as 30 mW under RT-CW operation with a stable fundamental transverse mode. The lifetime of the LDs at a constant output power of 5 mW was estimated to be approximately 3,000 hours under CW operation at an ambient temperature of 50 degrees Celsius. These violet InGaN-based LDs are already commercially available in a market.

Citation Download Citation

Shuji Nakamura "Three years of InGaN quantum-well lasers: commercialization already", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344525

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