W-band MHEMT MMIC LNA

Kiuchul C. Hwang; Peter Chao; Paul Hoff

doi:10.1117/12.373010

13 December 1999 W-band MHEMT MMIC LNA

Kiuchul C. Hwang, Peter Chao, Paul Hoff

Proceedings Volume 3861, Gigahertz Devices and Systems; (1999) https://doi.org/10.1117/12.373010
Event: Photonics East '99, 1999, Boston, MA, United States

Abstract

Excellent noise and gain have been demonstrated at W-band with metamorphic HEMTs MMICs. The performance of the low noise amplifier (LNA) MHEMTs is very close to that of InP HEMTs on InP substrate. The material structure of the MHEMT has been developed using an AlGaAsSb lattice strain relief buffer layer on a GaAs substrate. DC characteristics of the 0.1 X 36 micrometers devices have shown typical extrinsic transconductance (g_m) of 1200 mS/mm to 1300 mS/mm depending on Indium mole fraction in the channel. Small- signal S-parameter measurements performed on the 0.1 X 36 micrometers devices exhibited an excellent f_T of 225 GHz and Maximum Stable Gain of 12.9 dB at 60 GHz and 10.4 dB at 110 GHz. The 3-stage W-band LNA MMIC exhibits 4.2 dB noise figure with 18 dB gain at 82 GHz and 4.8 dB noise figure with 14 dB gain at 89 GHz.

Citation Download Citation

Kiuchul C. Hwang, Peter Chao, and Paul Hoff "W-band MHEMT MMIC LNA", Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); https://doi.org/10.1117/12.373010

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available