Paper
27 April 2000 High-speed Si MSM photodetector and VCSEL for optoelectronic interconnects
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Abstract
We report the fabrication and processing of thin film MSM silicon photo-detector and thin film VCSEL for optoelectronic interconnects. These two components, together with polyimide wave-guide can be used in constructing the high sped, low power, low cost optical interconnection system. Such a system will provide the fast board level data transmission. The DC and AC characteristics of thin film silicon MSM photo-detector, and the I-V and L-I characteristics of thin film VCSEL are measured.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Lin, Chulchae Choi, Yujie Liu, Gauri V. Karve, Bipin Bihari, and Ray T. Chen "High-speed Si MSM photodetector and VCSEL for optoelectronic interconnects", Proc. SPIE 3952, Optoelectronic Interconnects VII; Photonics Packaging and Integration II, (27 April 2000); https://doi.org/10.1117/12.384413
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Vertical cavity surface emitting lasers

Semiconducting wafers

Thin films

Optoelectronics

Optical interconnects

Silicon films

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