Paper
23 June 2000 Materials design and lithographic performance of maleic anhydride/cycloolefin copolymer for ArF resist
Joo Hyeon Park, Jae-Young Kim, Dong-Chul Seo, Sun-Yi Park, Hosull Lee, Seong-Ju Kim, Jae Chang Jung, Ki-Ho Baik
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Abstract
Photoresist using maleic anhydride/cycloolefin copolymer is a leading candidate for the 193 nm photolithography. Until recently, the efforts to improve 193 nm photoresist have been focused on resolution and dry-etch resistance. Therefore, we have synthesized some kinds of matrix resins and additives containing alicyclic group and acid labile group. The matrix resin is alternating copolymer obtained by free radical polymerization of maleic anhydride and cycloolefinic derivatives. And, the additives have a low molecular weight containing alicyclic group and acid labile group. The additives not only serve as dissolution inhibitors but also improve the pattern profile and dry-etch resistance. In this paper, we will describe the approaches to the resist materials, which are involved in our photoacid generator concept.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joo Hyeon Park, Jae-Young Kim, Dong-Chul Seo, Sun-Yi Park, Hosull Lee, Seong-Ju Kim, Jae Chang Jung, and Ki-Ho Baik "Materials design and lithographic performance of maleic anhydride/cycloolefin copolymer for ArF resist", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388281
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KEYWORDS
Polymers

Resistance

Etching

Lithography

Polymerization

Silicon

Photoresist materials

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