Progress in 157-nm lithography development at Intel: resists and reticles

Veena Rao; Eric M. Panning; Ling Liao; John M. Hutchinson; Andrew Grenville; Susan M. Holl; Don Bruner; Raghu Balasubramanian; Ronald Kuse; Giang T. Dao; Jun-Fei Zheng; Kevin J. Orvek; Joseph C. Langston; Fu-Chang Lo

doi:10.1117/12.389005

5 July 2000 Progress in 157-nm lithography development at Intel: resists and reticles

Veena Rao, Eric M. Panning, Ling Liao, John M. Hutchinson, Andrew Grenville, Susan M. Holl, Don Bruner, Raghu Balasubramanian, Ronald Kuse, Giang T. Dao, Jun-Fei Zheng, Kevin J. Orvek, Joseph C. Langston, Fu-Chang Lo

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389005
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Intel is aggressively pursuing the use of 157 nm lithography for the 0.1 mm patterning node. Two areas of concentration have been in photoresist and reticle materials development. Over the six months, we have seen considerable progress in new materials development in both areas. In the photoresist area, the use of ultra-thin resists of currently used chemistries appear to be capable of providing short-term layer development and tool testing patterning capability. We have obtained imaging results using a 0.5 NA Schwartzchild optics system. Our best result to data show 70-80 nm lines printed on a pitch of 180 nm. While this small field system has considerably immature optics, it can be used effectively to do basic resist development. In the area of reticle materials development, we have seen considerable improvement in the reduction of OH in blank materials, resulting in higher transmission. We expect to see substrates with greater than 80 percent transmission within the next year at the current rate of accelerated progress. Furthermore, we are not seeing any major processing differences with these new blank materials. Overall, we have seen an accelerated pace of learning in materials development for both resist and new blank materials. Overall, we have seen an accelerated pace of learning in materials development for both resist and reticle materials for 157 nm lithography.

Citation Download Citation

Veena Rao, Eric M. Panning, Ling Liao, John M. Hutchinson, Andrew Grenville, Susan M. Holl, Don Bruner, Raghu Balasubramanian, Ronald Kuse, Giang T. Dao, Jun-Fei Zheng, Kevin J. Orvek, Joseph C. Langston, and Fu-Chang Lo "Progress in 157-nm lithography development at Intel: resists and reticles", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389005

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available