Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography

Janis Teteris; Timo Jaeaeskelaeinen; Jari Pekka Turunen; K. Jefimov

doi:10.1117/12.373626

29 December 1999 Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography

Janis Teteris, Timo Jaeaeskelaeinen, Jari Pekka Turunen, K. Jefimov

Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373626
Event: Photonics Prague '99, 1999, Prague, Czech Republic

Abstract

New results on the studied of photo- and electron beam induced changes in solubility of amorphous As-S-Se and As₂S₃ thin films are reviewed. It is shown that amorphous chalcogenide semiconductor resist can be applied in holography and the fabrication of diffractive optical elements by electron beam lithography is possible.

Citation Download Citation

Janis Teteris, Timo Jaeaeskelaeinen, Jari Pekka Turunen, and K. Jefimov "Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); https://doi.org/10.1117/12.373626

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