Paper
29 November 2000 Study of interdiffusion in HgCdTe/CdZnTe structures by infrared transmission spectroscopy
Gensheng Huang, Jianrong Yang, Xinqiang Chen, Weizheng Fang, Zhiming Huang, Li He
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408451
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Based on empirical rules for the intrinsic absorption coefficient and refractive index of Hg1-xCdxTe in Hougen's model, a novel calculation method determining the composition profile of epitaxy layer from room- temperature infrared transmittance spectroscopy is presented. The composition depth profile of Hg1-xCdxTe film samples grown by liquid-phase epitaxy and after annealing is determined using this method. The expression of the composition interdiffusion coefficient for Hg1-xCdxTe was deduced.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gensheng Huang, Jianrong Yang, Xinqiang Chen, Weizheng Fang, Zhiming Huang, and Li He "Study of interdiffusion in HgCdTe/CdZnTe structures by infrared transmission spectroscopy", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408451
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KEYWORDS
Infrared spectroscopy

Infrared radiation

Annealing

Liquid phase epitaxy

Absorption

Epitaxy

Refractive index

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