Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by rapid thermal annealing and proton implantation

Ning Li; Xingquan Liu; Na Li; Wei Lu; Xianzhang Yuan; Shuechu Shen; Hark Hoe Tan; L. Fu; Chennupati Jagadish

doi:10.1117/12.408418

29 November 2000 Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by rapid thermal annealing and proton implantation

Ning Li, Xingquan Liu, Na Li, Wei Lu, Xianzhang Yuan, Shuechu Shen, Hark Hoe Tan, L. Fu, Chennupati Jagadish

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408418
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Due to the mature material growth and device fabrication technology, GaAs/Al_xGa_1-xAs quantum-well infrared photodetector (QWIP) has been extensively studied and used in remote sensing, particularly in long wavelength range, e.g. the atmospheric window region of 8 approximately 14 micrometers . This paper reports the using of intermixing techniques to modify GaAs/AlGaAs multiple quantum well photodetectors (QWIPs). A red shift in response wavelength of QWIP has been obtained both by rapid thermal annealing (RTA) and proton implantation. The peak response wavelengths has been shifted into the atmospheric window (8.3 micrometers ) from the originally 7.7 micrometers . The response spectra have been measured as the function of the different temperature of the RTA and the ion doses in the range from 4 X 10¹⁴ to 5 X 10¹⁵ cm^-3, respectively. The device performance such as dark current and blackbody response are also measured at different conditions. The effect of RTA and ion implantation on the device performance has been interpreted theoretically by the interdiffusion of Al atoms across the GaAs/Al_xGa_1-xAs heterointerfaces.

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Ning Li, Xingquan Liu, Na Li, Wei Lu, Xianzhang Yuan, Shuechu Shen, Hark Hoe Tan, L. Fu, and Chennupati Jagadish "Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by rapid thermal annealing and proton implantation", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408418

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