Paper
6 November 2000 High-resolution contact lithography by excimer lasers
Huijie Huang, Dunwu Lu, Longlong Du, Yongkai Zhao, Cailai Yuan, Baocai Jiang, Runwen Wang
Author Affiliations +
Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405742
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan
Abstract
High-resolution contact lithography was conducted by both 248-nm KrF and 193-nm ArF excimer lasers on PMMA resist. The resist thickness is about 0.5 (mu) . Resolution of 0.5- (mu) lines and spaces was obtained on PMMA resist after KrF excimer laser exposure and subsequent wet development. No self-developing photoetching was observed. However, with ArF excimer laser as the exposure light source, resolution of 0.3-(mu) lines and spaces was obtained on the same resist by direct photoetching under high exposure dose combined with subsequent conventional wet developing process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huijie Huang, Dunwu Lu, Longlong Du, Yongkai Zhao, Cailai Yuan, Baocai Jiang, and Runwen Wang "High-resolution contact lithography by excimer lasers", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405742
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KEYWORDS
Excimer lasers

Lithography

Polymethylmethacrylate

Deep ultraviolet

Light sources

Laser development

Photoresist materials

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