Paper
23 March 2001 Emissivity-corrected infrared thermal pulse measurement on microscopic semiconductor targets
Grant C. Albright, James A. Stump, Chunpang Li, Herbert Kaplan
Author Affiliations +
Abstract
The precision measurement and recording of high speed thermal transients on microscopic targets is critical to the manufacturing of semiconductors and other electronic devices as thermal budgets become over more demanding and devices become more compact and powerful. This paper describes the fully automated emissivity- corrected measurement of high speed thermal pulses at speeds up to 200 KHz representing the newest innovation in almost 25 years of thermal microimager evolution. Sample thermal images and time-based thermal scans are presented demonstrating the use of this transient measurement capability in the detection and identification of design and process defects. The documentation of a measurement spatial resolution of better than 3 micrometers is also reviewed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grant C. Albright, James A. Stump, Chunpang Li, and Herbert Kaplan "Emissivity-corrected infrared thermal pulse measurement on microscopic semiconductor targets", Proc. SPIE 4360, Thermosense XXIII, (23 March 2001); https://doi.org/10.1117/12.420983
Lens.org Logo
CITATIONS
Cited by 11 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Temperature metrology

Semiconductors

Thermography

Cameras

Infrared radiation

Image resolution

Infrared imaging

RELATED CONTENT

Performance Of A Thermal Scene Generator
Proceedings of SPIE (June 30 1989)
Benefits of IR/visible fusion
Proceedings of SPIE (April 09 2007)
Thermographic Sensing For On-Line Industrial Control
Proceedings of SPIE (October 23 1986)
Remote Infrared Imagery Of Shuttle During Entry
Proceedings of SPIE (November 13 1980)

Back to Top