High-resolution proximity printing by wave-optically designed complex transmission masks

Sven Buehling; Frank Wyrowski; Ernst-Bernhard Kley; Ton J.M. Nellissen; Lingli Wang; Maarten Dirkzwager

doi:10.1117/12.425209

26 April 2001 High-resolution proximity printing by wave-optically designed complex transmission masks

Sven Buehling, Frank Wyrowski, Ernst-Bernhard Kley, Ton J.M. Nellissen, Lingli Wang, Maarten Dirkzwager

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425209
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Photolithography based on proximity printing offers a high throughput and cost effective patterning technology for production of for instance large area liquid crystal displays. The resolution of this technique is limited due to wave-optical effects in the proximity gap between the binary amplitude mask and the substrate. We can improve the resolution drastically by replacing the conventional photomask with a mask causing both amplitude and phase modulation of the illumination wave. We describe a wave- optical design procedure of such masks. The feasibility of the method is demonstrated by results from computer simulations and practical experiments. We show that for a 50 micron gap a 3 micron line/space pattern is resolved clearly for visible light illumination, whereas under conventional conditions the image is completely degraded. The proximity mask used in our experiments was fabricated by e-beam lithography with four height levels and two amplitude transmission values.

Citation Download Citation

Sven Buehling, Frank Wyrowski, Ernst-Bernhard Kley, Ton J.M. Nellissen, Lingli Wang, and Maarten Dirkzwager "High-resolution proximity printing by wave-optically designed complex transmission masks", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425209

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