Pushing reliability limits in SiO2: an extension to gate oxide scaling

Pradip K. Roy; Y. Chen; Sundar Chetlur

doi:10.1117/12.441290

25 September 2001 Pushing reliability limits in SiO₂: an extension to gate oxide scaling

Pradip K. Roy, Y. Chen, Sundar Chetlur

Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441290
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India

Abstract

Graded-Grown-Gate oxide involves a 2-step synthesis of growing an oxide at a temperature above the viscoelastic temperature onto a pre-grown SiO₂ layer. The cooling rate is carefully modulated near T_ve-925 degrees C to enhance growth induced stress relaxation. This new ultra- thin gate oxide process is manufacturable and delivers significant improvement in transistor performance and exceptional reliability. These improvements are a consequence of a planar and stress-free Si/SiO₂ generated by this novel process.

Citation Download Citation

Pradip K. Roy, Y. Chen, and Sundar Chetlur "Pushing reliability limits in SiO₂: an extension to gate oxide scaling", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441290

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