Optoelectronic design of an infrared detector

Arllene Mariana Perez; Rubi Salazar; Alfonso Torres; Francisco Renero

doi:10.1117/12.437141

14 August 2001 Optoelectronic design of an infrared detector

Arllene Mariana Perez, Rubi Salazar, Alfonso Torres, Francisco Renero

Proceedings Volume 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications; (2001) https://doi.org/10.1117/12.437141
Event: IV Iberoamerican Meeting of Optics and the VII Latin American Meeting of Optics, Lasers and Their Applications, 2001, Tandil, Argentina

Abstract

In this work we present some results obtained on the design and fabrication of Schottky barrier photodetector. The derive is suitable for operation in the IR zone of the electromagnetic spectrum. This device is fabricated by using a Silicon-Germanium amorphous alloy on p-type crystalline silicon. The device operates in the range 1.0-4.5 micrometers . Also we present some optical design for applications in the device operation range wavelength.

Citation Download Citation

Arllene Mariana Perez, Rubi Salazar, Alfonso Torres, and Francisco Renero "Optoelectronic design of an infrared detector", Proc. SPIE 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications, (14 August 2001); https://doi.org/10.1117/12.437141

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