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Mechanisms of defect-formation in heterolayers compounds II-VI had considered. Influence of isovalent impurity on generated dot point defect, optical properties and radiation stabilizing of investigated layers has discussed. The basic parameters of some devices had considered.
V. P. Makhniy,V. E. Baranjuk,N. V. Demich,V. V. Melnyk,I. V. Malimon,Mikhail M. Slyotov,B. M. Sobistchanskiy, andE. V. Stets
"Isovalent substitution: a perspective method of producing heterojunction optoelectronical devices", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); https://doi.org/10.1117/12.429735
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V. P. Makhniy, V. E. Baranjuk, N. V. Demich, V. V. Melnyk, I. V. Malimon, Mikhail M. Slyotov, B. M. Sobistchanskiy, E. V. Stets, "Isovalent substitution: a perspective method of producing heterojunction optoelectronical devices," Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); https://doi.org/10.1117/12.429735