Electrical and transport characteristics of doped Bi12TiO20 photorefractive single crystals

Vera Marinova; Ventseslav Christov Sainov

doi:10.1117/12.432880

29 June 2001 Electrical and transport characteristics of doped Bi₁₂TiO₂₀ photorefractive single crystals

Vera Marinova, Ventseslav Christov Sainov

Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432880
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania

Abstract

Bi₁₂TiO₂₀ single crystals doped with Cd, Cu, P, Cr, Ag, Al were grown by the top-seeded solution growth method (TSSG). The electrical measurements were carried out on different BTO samples. The electrical conductivity followed the Arrhenius low, with an activation energy ranged from 0.38 to 0.63 eV. Mobility and transport properties of charge photo carriers were investigated by the time-of-flight technique. For non-doped BTO and doped with Cu, P, Al and Cd the obtained values for drift mobility of electrons varying between (mu) equals10^-2 and 1 [cm²/V.s]. In the case of BTO doped with Al the dominant charge carriers were holes with mobility (mu) equals5x10^-3 [cm²/V.s]. These key photorefractive parameters were used to calculate the lifetime of charge carriers using the period of the recorded holographic photorefractive space gratings.

Citation Download Citation

Vera Marinova and Ventseslav Christov Sainov "Electrical and transport characteristics of doped Bi₁₂TiO₂₀ photorefractive single crystals", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432880

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