Design and simulation of erbium-doped waveguide amplifiers

Renyuan Gao; Renfeng Gao

doi:10.1117/12.447625

6 November 2001 Design and simulation of erbium-doped waveguide amplifiers

Renyuan Gao, Renfeng Gao

Proceedings Volume 4439, Design, Manufacturing, and Testing of Planar Optical Waveguide Devices; (2001) https://doi.org/10.1117/12.447625
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

The erbium doped waveguide amplifier (EDWA) provides the benefits of high gain per unit length and compact size. We use the erbium two-level system model with the measured material properties and waveguide properties to study the amplifier performance dependence on operating conditions and EDWA lengths. We have established a modeling, simulation, and designing framework to systematically study the amplifier performance issues from materials to device packaging. Simulations of two EDWA examples based on alumino-silicate and phosphate glasses are carried out in detail.

Citation Download Citation

Renyuan Gao and Renfeng Gao "Design and simulation of erbium-doped waveguide amplifiers", Proc. SPIE 4439, Design, Manufacturing, and Testing of Planar Optical Waveguide Devices, (6 November 2001); https://doi.org/10.1117/12.447625

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