Current blocking layer in GaN light-emitting diode

Chul Huh; Ji-Myon Lee; Dong-Joon Kim; Seong-Ju Park

doi:10.1117/12.450040

5 December 2001 Current blocking layer in GaN light-emitting diode

Chul Huh, Ji-Myon Lee, Dong-Joon Kim, Seong-Ju Park

Proceedings Volume 4445, Solid State Lighting and Displays; (2001) https://doi.org/10.1117/12.450040
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) was fabricated using a SiO₂ current blocking layer (CBL) inserted underneath the p-pad electrode. The forward voltage, V_f at 20 mA for InGaN/GaN MQW LED with a CBL(V_F=3.5 V) was slightly higher than that of the conventional InGaN/GaN MQW LED(V_F=3.4V) due to the reduction in the total area of p-type metal contact between the transparent Pt layer and the p-GaN. However, the light- output power for InGaN/GaN MQW LED with a CBL at 20 mA was significantly increased by 62% compared to that for the conventional InGaN/GaN MQW LED structure. This increase in the light-output power can be attributed to the more amount of current injected into the active area of the LED through the light-transmitting metal layer and a reduced parasitic optical absorption in the p-pad electrode.

Citation Download Citation

Chul Huh, Ji-Myon Lee, Dong-Joon Kim, and Seong-Ju Park "Current blocking layer in GaN light-emitting diode", Proc. SPIE 4445, Solid State Lighting and Displays, (5 December 2001); https://doi.org/10.1117/12.450040

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