Electronic defect characteristics of pentacene organic thin films deposited on SiO2/Si substrates

Yong Suk Yang; Seong Hyun Kim; Jeong-Ik Lee; Hye Yong Chu; Lee Mi Do; Hyoyoung Lee; Ji Young Oh; Jung Hun Lee; Taehyoung Zyung; Min Ki Ryu; Min Su Jang

doi:10.1117/12.457496

27 February 2002 Electronic defect characteristics of pentacene organic thin films deposited on SiO₂/Si substrates

Yong Suk Yang, Seong Hyun Kim, Jeong-Ik Lee, Hye Yong Chu, Lee Mi Do, Hyoyoung Lee, Ji Young Oh, Jung Hun Lee, Taehyoung Zyung, Min Ki Ryu, Min Su Jang

Author Affiliations +

Proceedings Volume 4464, Organic Light-Emitting Materials and Devices V; (2002) https://doi.org/10.1117/12.457496
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Organic thin-film transistors (TFTs) using the pentacene as an active electronic material have shown the mobility of 0.8 cm²Vs and the grains larger than 1 micrometers . Deep level transient spectroscopy (DLTS) measurements have been carried out on metal/insulator/organic-semiconductor (MIS) structure devices that have a depletion region at the insulator/organic-semiconductor interface. The very long capacitance transients were measured by the trapping of electronic charge carriers distributed in energy. Based on the DLTS characteristics, the energy levels of hole and electron traps in the obtained pentacene films were approximately E_v+0.24eV, E_v+0.31eV, and E_c- 0.69eV.

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Yong Suk Yang, Seong Hyun Kim, Jeong-Ik Lee, Hye Yong Chu, Lee Mi Do, Hyoyoung Lee, Ji Young Oh, Jung Hun Lee, Taehyoung Zyung, Min Ki Ryu, and Min Su Jang "Electronic defect characteristics of pentacene organic thin films deposited on SiO₂/Si substrates", Proc. SPIE 4464, Organic Light-Emitting Materials and Devices V, (27 February 2002); https://doi.org/10.1117/12.457496

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