Experimental demonstration of all-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier

Horacio Soto; Joseph Topomonzo; Didier Erasme; George Guekos

doi:10.1117/12.444953

19 October 2001 Experimental demonstration of all-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier

Horacio Soto, Joseph Topomonzo, Didier Erasme, George Guekos

Author Affiliations +

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444953
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In this communication, we demonstrate experimentally a new design for all-optical AND and NAND gates operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam. The all-optical gates here described differ from other ones developed before using semiconductor optical amplifiers by their ability to operate on non-degenerate input signals with an output signal wavelength independent of the input signals wavelength.

Citation Download Citation

Horacio Soto, Joseph Topomonzo, Didier Erasme, and George Guekos "Experimental demonstration of all-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444953

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