A Comparison Of LiNbo3 And III-V Semiconductor Technologies For Integrated Optics

E Garmire

doi:10.1117/12.939450

26 September 1984 A Comparison Of LiNbo₃ And III-V Semiconductor Technologies For Integrated Optics

E Garmire

Proceedings Volume 0460, Processing of Guided Wave Optoelectronic Materials I; (1984) https://doi.org/10.1117/12.939450
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The relative merits of LiNb0₃ and III-V semiconductors are compared for use in integrated optics. It is shown that their different material properties and fabrication characteristics affect their device performance. Device design must be optimized for the particular material used.

Citation Download Citation

E Garmire "A Comparison Of LiNbo₃ And III-V Semiconductor Technologies For Integrated Optics", Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); https://doi.org/10.1117/12.939450

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