Current profiling in broad-area semiconductor lasers

Vincent Voignier; C. Sailliot; John A. Houlihan; James R. O'Callaghan; G. Wu; Guillaume Huyet; John Gerard McInerney

doi:10.1117/12.470533

12 June 2002 Current profiling in broad-area semiconductor lasers

Vincent Voignier, C. Sailliot, John A. Houlihan, James R. O'Callaghan, G. Wu, Guillaume Huyet, John Gerard McInerney

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470533
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.

Citation Download Citation

Vincent Voignier, C. Sailliot, John A. Houlihan, James R. O'Callaghan, G. Wu, Guillaume Huyet, and John Gerard McInerney "Current profiling in broad-area semiconductor lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470533

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