Paper
24 July 2002 Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures
Evgenii V. Lutsenko, Vitalii Z. Zubialevich, Vyacheslav N. Pavlovskii, Igor P. Marko, Alexander L. Gurskii, Gennadii P. Yablonskii, Holger Kalisch, Thomas Walther, Oliver Schoen, Harry Protzmann, Markus Luenenbuerger, Bernd Schineller, Michael Heuken
Author Affiliations +
Proceedings Volume 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems; (2002) https://doi.org/10.1117/12.475959
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
ZnSe/ZnMgSSe and InGaN/GaN heterostructure based lasers under optical transverse pumping by pulsed N2-laser radiation were investigated in a wide spectral, temperature and excitation intensity range for various types of heterostructures which differed in the epitaxial layer composition, layer sequence and thickness. The spectral- angular distribution of the laser emission of the ZnSe/ZnMgSSe separate confinement heterostructures and the influence of the excitaion intensity and the cavity length on the laser mode structure were investigated. It was found that the main degradation mechanism of the ZnSe/ZnMgSSe multiple quantum well heterostructures at temperatures higher than 400 K is the diffusion of S atoms from the barriers into the quantum wells which leads to increasing point defect concentration in the active layers of the laser. The recovery of the laser threshold of the ZnSe/ZnMgSSe MQW-SCHs degraded during thermal annealing after the action of the inherent laser radiation is attributed to a significant decrease of the point defects in the active layers. Laser action of InGaN/GaN multiple quantum well heterostructures in the blue spectral region has been obtained for the first time and investigated. Temperature tuning of InGaN/GaN MQW laser emission from the violet to blue has been realized. The influence of the photoluminescence characteristics on the laser parameters of the InGaN/GaN MQW optically pumped lasers operating in the blue spectral region is investigated.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evgenii V. Lutsenko, Vitalii Z. Zubialevich, Vyacheslav N. Pavlovskii, Igor P. Marko, Alexander L. Gurskii, Gennadii P. Yablonskii, Holger Kalisch, Thomas Walther, Oliver Schoen, Harry Protzmann, Markus Luenenbuerger, Bernd Schineller, and Michael Heuken "Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures", Proc. SPIE 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems, (24 July 2002); https://doi.org/10.1117/12.475959
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KEYWORDS
Heterojunctions

Laser damage threshold

Quantum wells

Temperature metrology

Laser optics

Luminescence

Optical pumping

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