Paper
5 September 2002 Semiconductor unstable-resonator laser diodes for high-power and high-brightness applications
Eckard Deichsel, Peter Unger
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Abstract
A dry-etching process for laser fabrication with vertical, smooth, and flat facets was developed. Using this optimized chemically assisted ion-beam etching (CAIBE) process, unstable-resonator lasers were fabricated and investigated. Such a device exhibits an optical output power of 1.3W at 2A pump current without thermal roll over or catastrophic optical mirror damage (COMD). A differential quantum efficiency of 60% and a threshold current density of 225A/cm2 was measured. Virtual source sizes are in the range of 5 µm (FWHM). More than 80% of the intensity of the virtual sources is included in the main lobe. The position of the virtual source inside the laser is located 340?345 µm behind the output facet and almost independent on pumping current. The brightness of such laser devices is about one order of magnitude higher than the brightness of broad-area lasers and therefore suitable for single-mode ber coupling.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eckard Deichsel and Peter Unger "Semiconductor unstable-resonator laser diodes for high-power and high-brightness applications", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482207
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KEYWORDS
Mirrors

Semiconductor lasers

Resonators

Etching

Laser resonators

Continuous wave operation

Reactive ion etching

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